Design and Simulation of a 5.8GHz Low Noise Amplifier Used in RFID

Yu Zhang; Shu Hui Yang; Yin Chao Chen

doi:10.4028/www.scientific.net/AMM.441.133

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 441Design and Simulation of a 5.8GHz Low Noise...

Design and Simulation of a 5.8GHz Low Noise Amplifier Used in RFID

Abstract:

A 5.8GHz single-stage low noise amplifier (LNA) for radio frequency identification devices (RFID) applications was proposed according to the theory of LNA. It has been realized by ATF-541M4 transistor and its peripheral circuit, such as bias circuit, input and output matching network. The proposed LNA provides a gain of 12.696dB from the analysis of ADS. The LNA achieves 0.951dB noise figure (NF) at the frequency of 5.8GHz. The simulation results show that this LNA has good noise characteristic, the NF is less than other published paper.

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Periodical:

Applied Mechanics and Materials (Volume 441)

Pages:

133-136

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.441.133

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Online since:

December 2013

Authors:

Yu Zhang*, Shu Hui Yang, Yin Chao Chen

Keywords:

Gain, Low Noise Amplifier (LNA), Noise Figure (NF), S Parameters

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* - Corresponding Author

References

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