Effects of Annealing on Pulsed Laser Deposited TiO₂ Thin Films

Abstract:

Mixed phase TiO₂ thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

• Periodical: Applied Mechanics and Materials (Volumes 446-447)
• Pages: 306-311
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.446-447.306
• Online since: November 2013
• Authors: Sudhanshu Dwivedi, Somnath Biswas*
• Keywords: Anatase, Photoluminescence (PL), Pulsed Laser Deposition, Rutile, TiO₂

References

[1] B. O'Regan and M. Grätzel: Nature Vol. 353 (1991), p.737.

[2] V. Mikhelashvili and G. Eisenstein: J. Appl. Phys. Vol. 89 (2001), p.3256.

[3] A. Iwabuchi, C. K. Choo and K. Tanaka: J. Phys. Chem. Vol. 108 (2004), p.10863.

[4] N. Vlachopoulos, P. Liska, J. Augustynski and M. Grätzel: J. Am. Chem. Soc. Vol. 110 (1988), p.1216.

[5] G. Banfi, V. Degiorgio and D. Ricard: Adv. Phys. Vol. 47 (1997), p.447.

[6] J. K. Burdett, T. Hughbanks, G. J. Miller, J. W. Richardson and J. V. Smith: J. Am. Chem. Soc. Vol. 109 (1987), p.3639.

[7] X. Liu, J. Yin, Z. G. Liu, X. B. Yin, G. X. Chen and M. Wang: Appl. Surf. Sci. Vol. 174 (2001), p.35.

[8] D. Yoo, I. Kim, S. Kim, C. H. Hahn, C. Lee and S. Cho: Appl. Surf. Sci. Vol. 253 (2007), p.3888.

[9] K. Z. Yahya: Ph.D. dissertation, University of Technology-Iraq (2010), pp.1-154.

[10] M. N. Iliev, V. G. Hadjiev and A. P. Litvinchuk: Vib. Spectrosc. Vol. 64 (2013), p.148.

[11] ICDD Card No. 01-072-4814.

[12] ICDD Card No. 01-073-1764.

[13] Y. Djaoued, S. Badilescu, P. V. Ashrit, D. Bersani, P. P. Lottici and J. Robichaud: J. Sol-Gel Sci. Technol. Vol. 24 (2002), p.255.

DOI: 10.1023/a:1015357313003

[14] M. Yan, F. Chen, J. Zhang and M. Anpo: J. Phys. Chem. B Vol. 109 (2005), p.8673.

[15] I. P. Lisovskyy, V. G. Litovchenko, D. O. Mazunov, S. Kaschieva, J. Koprinarova and S. N. Dmitriev: J. Optoelectron. Adv. Mater. 7 (2005), p.325.

[16] B. A. Sava and T. Visan: U. P. B. Sci. Bull., Series B Vol. 69 (2007), p.11.

[17] G. Liu, X. Yan, Z. Chen, X. Wang, L. Wang, G. Q. Lu and H. M. Cheng: J. Mater. Chem. Vol. 19 (2009), p.6590.

[18] P. D. Cozzoli, A. Kornowski and H. Weller: J. Am. Chem. Soc. Vol. 125 (2003), p.14539.

[19] C. Matranga and B. Bockrath: J. Phys. Chem. B Vol. 108 (2004), p.6170.

[20] U. Balachandran and N. G. Eror: J. Solid State Chem. Vol. 42 (1982), p.276.

[21] V. Swamy, B. C. Muddle and Q. Dai: Appl. Phys. Lett. Vol. 89 (2006), p.163118.

[22] M. F. Best and R. A. Condrate Sr.: J. Mater. Sci. Lett. Vol. 4 (1985), p.994.

[23] X. Gao, S. R. Bare, J. L. G. Fierro, M. A. Banares and I. E. Wachs: J. Phys. Chem. B Vol. 102 (1998), p.5663.

[24] J. Strunk, W. C. Vining and A. T. Bell: J. Phys. Chem. C Vol. 114 (2010), p.16937.

[25] P. A. Temple and C. E. Hathaway: Phys. Rev. B. Vol. 7 (1973), p.3685.

[26] N. Serpone, D. Lawless and R. Khairutdinov: J. Phys. Chem. Vol. 99(1995), p.16646.

[27] A. Imanishi, T. Okamura, N. Ohashi, R. Nakamura and Y. Nakato: J. Am. Chem. Soc. Vol. 129 (2007), p.11569.

[28] F. J. Knorr, C. C. Mercado and J. L. McHale: J. Phys. Chem. Vol. 112 (2008), p.12786.

[29] X. Wang, Z. Feng, J. Shi, G. Jia, S. Shen, J. Zhou and Can Li: Phys. Chem. Chem. Phys. Vol. 12 (2010), p.7083.