3D-ZnO Nanorods Photoelectrodes for Quantum-Dot Sensitized Solar Cells

Yan Li Chen; Wu You Fu; Pin Lv

doi:10.4028/www.scientific.net/AMM.448-453.1433

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 448-4533D-ZnO Nanorods Photoelectrodes for Quantum-Dot...

3D-ZnO Nanorods Photoelectrodes for Quantum-Dot Sensitized Solar Cells

Abstract:

In this study, the three dimensional ZnO (3D-ZnO) nanorods were synthesized by a simple chemical solution method, which were used as photoelectrodes, and CdS QDs were deposited on the surface of the 3D-ZnO nanorods to act a light absorber by using the successive ionic layer adsorption and reaction (SILAR) method. The photovoltaic performances of the semiconductor quantum dots sensitized solar cells based on CdS QDs/3D-ZnO photoelectrodes were investigated. A maximum 5.06 mA/cm² short circuit current density and 1.03% conversion efficiency under one sun illumination has been achieved. These results demonstrate that the CdS QDs-sensitized 3D-ZnO nanorods photoelectrode has a potential application in solar cells.

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Periodical:

Applied Mechanics and Materials (Volumes 448-453)

Pages:

1433-1436

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.448-453.1433

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Online since:

October 2013

Authors:

Yan Li Chen, Wu You Fu*, Pin Lv

Keywords:

3D-ZnO Nanorods, Cadmium Sulfide, Power Conversion Efficiency, Quantum-Dot Sensitized Solar Cell

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