Influence of Ge and Si Doping on the Microstructure and Dielectric Properties of Barium Titanate Ceramics

Abstract:

GeO₂ has been doped solely and together with SiO₂ into barium titanate ceramics by mixing and calcination. The microstructure and dielectric properties of doped BaTiO₃ have been characterized. When doped in BaTiO₃, Ge⁴⁺ ion could incorporated into the crystal lattice of BaTiO₃ to occupied Ti⁴⁺ sites. For relative smaller Ge⁴⁺ ion, the tetragonal phase could be enhanced. As dielectric properties have strong relation to tetragonal phase. The relative permittivity could be increased in this mechanism. However, the high leakage current which induced by more ionic defect was also lead to high dielectric loss. Besides, the assemble in grain boundary by Ge⁴⁺ ion may also have effect. Results on the GeO₂-SiO₂ co-doped sample showed that the mechanisms of Ge doping and Si doing could happen at one time.

• Periodical: Applied Mechanics and Materials (Volume 464)
• Pages: 44-49
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.464.44
• Online since: November 2013
• Authors: Zhen Jiang Shen, Li Na Bing*, Hong Yan Peng, Shao Hua Gong, Wei Wu
• Keywords: Barium Titanate Ceramics, Dielectric Property, Doping, Ge, Microstructure, Si

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