Electrical and Structural Properties of Multioriented Thin Film PZT Deposited at Room Temperature by RF-PVD

Article Preview

Abstract:

As PZT target are prepared from solid solution method. The perovskit phase evolution is investigated in this paper by DRX at different temperatures in order to show crystallization, morphology and structure of lead zirconate ceramics (PZT) target. Samples were deposited at room temperature on Aluminum (Al) and silicon (Si) substrates, and then heat-treated in a tabular furnace at 200 and 400°C during 30 min under atmospheric pressure. The films characterization were done glancing incidences X-ray diffraction (GIXRD) analysis with Fe Kα radiation (l=1.936Å ) at glancing angle of 1.5°for crystallographic characteristics; and Scanning Electron Microscopy (SEM-Zeiss ultra plus) in Ultra-High resolution imaging to observe surfaces morphology and cross-sections of thin films.We present in this paper a x-ray diffraction analysis, showing that as-deposited PZT films depend strongly on substrate nature, it presents an amorphous structure and nanocrystallizes in a pure perovskite phase PbZr0.44Ti0.56O3 when it was deposited on Al substrate (followed by thermal treatement at 400°C).Ferroelectrics and piezoelectric properties are showed using Sawyer Tower circuit and impulsionel test respectively.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

89-93

Citation:

Online since:

November 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] C. Ruang Chalerm Wong et al, Thin solid films, Vol. 517, n°24, (2009) pp.6599-6604.

Google Scholar

[2] J.Z. Tsai et al, Sensors and actuators B: Chemical, Vol. 139, 2, (2009) pp.259-264.

Google Scholar

[3] Jeong Young Lee, Byung Soo Lee, Materials Science and Engineering B79(2001) pp.86-89.

Google Scholar

[4] T. Masuda, Y. Miyaguchi, M. Tanimura, Y. Nishioka, K. Suu, and N. Tani, AppliedSurface Science 169-170 (2001) pp.539-543.

DOI: 10.1016/s0169-4332(00)00716-9

Google Scholar

[5] Ming-Ming Zhang, Ze Jia, Tian-Ling Ren, Solid-state Electronics, 53 (2009) pp.473-477.

Google Scholar

[6] Zongjin Li, Hongyu Gong, Yujun Zhang, Current Applied Physics 9 (2009) pp.588-591.

Google Scholar

[7] Yeau-Ren Jeng, Ping-Chi Tsai, Te-Hua Fang, Microelectrinic Engineering, 65 (2003) pp.406-415.

Google Scholar

[8] Kazuyushi Tsuchia, Toshiaki Kitagawa and Eiji Nakmachi, Precision Enggineering 27 (2003) pp.258-264.

Google Scholar

[9] Xin-Shan Li, Tsunehisa Tanaka and Yoshihiko Suzuki, Thin Solid films 375 (2000) pp.91-94.

Google Scholar

[10] C. Zink, D. Pinceau, E. Delovoye and Delovoye and D. Barbier, Sensors and Actuators A115 (2004) pp.484-489.

Google Scholar

[11] W. Huang S.W. Jiangetal, Thinsolidefilms500(2006)pp.138-14.

Google Scholar

[12] Kwan . Chikao, Dielectric phenomena in solides 2004 Elsevier Inc.

Google Scholar

[13] Z. Mian SHAO, les nouveaux systéme ferroélectriques (La1-x Lnx)Ti2O7 : synthése , caractérisations structurales et mesures électriques sur massifs et couches minces.

Google Scholar