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Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films

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Abstract:

High-quality GaN films are deposited on diamond films using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) under the condition of the proper Trimethyl gallium (TMGa) flux. The influence of TMGa flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films with small surface roughness and high c-orientation are successfully achieved at the optimized flux. The most significant improvements in morphological and structural properties of GaN films are obtained by using a proper TMGa flux

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Periodical:

Applied Mechanics and Materials (Volumes 475-476)

Pages:

1299-1302

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.475-476.1299

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Online since:

December 2013

Authors:

Shan Lin Cui, Hong Gang, Zheng Nian Li

Keywords:

Diamond Films, GaN Films, TMGa Flux

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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