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Effect of Temperature on GaN Films Deposited on Diamond Substrate Using an ECR-PEMOCVD

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Abstract:

Highly-quality GaN films were deposited on diamond substrate using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at the proper temperature. The source of gallium is Trimethyl gallium (TMGa) and N2, and the influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), room temperature photoluminescence (PL), respectively. The dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 °C.

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Periodical:

Applied Mechanics and Materials (Volumes 475-476)

Pages:

1303-1306

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.475-476.1303

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Online since:

December 2013

Authors:

Chang Qing Liu*, Peng Qiu, Zhong Fei Gao, Bao Zhong Gan

Keywords:

Diamond Films, ECR-PEMOCVD, GaN Films

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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