The Analysis of Channel Stress Induced by CESL in N-MOSFET

M.J. Twu; W.C. Kao; K.C. Lin; K.D. Chen; Y.T. Kua; C.H. Liu

doi:10.4028/www.scientific.net/AMM.481.235

Paper Titles

Application of Computer Technology in the Simulation Process of Machine Design
p.217

Enhanced Tight Finite Key Scheme for Quantum Key Distribution (QKD) Protocol to Authenticate Multi-Party System in Cloud Infrastructure
p.220

Application of Z Transform in the Design of One-Dimensional Photonic Crystal
p.225

Finite Element Analysis of Stress Concentration at Rounded Crack Tip with Different Physical Parameters
p.230

The Analysis of Channel Stress Induced by CESL in N-MOSFET
p.235

Numerical Analysis of Junction Point Pressure during Droplet Formation in Y-Junction Microchannel
p.241

Bending Angle Characteristics of SPFC1180Y Steel by the Laser Irradiation Position
p.249

Compact Differential Dual-Frequency Antenna Based on Metamaterial
p.254

Influences of Surface Roughness of Steel Substrate on Bond Strength of Fiber Woven Composite
p.258

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 481The Analysis of Channel Stress Induced by CESL in...

The Analysis of Channel Stress Induced by CESL in N-MOSFET

Abstract:

The strained nitride capping layer (contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.

You might also be interested in these eBooks

Quantum, Nano, Micro Technologies and Applied Researches

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 481)

Pages:

235-240

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.481.235

Citation:

Cite this paper

Online since:

December 2013

Authors:

M.J. Twu*, W.C. Kao, K.C. Lin, K.D. Chen, Y.T. Kua, C.H. Liu

Keywords:

CESL Stressor, Channel Stress, Mobility

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] L. Washington,F. Nouri,S. Thirupapuliyur,G. Eneman,P. Verheyen,V. Moroz,L. Smith,X. Xu,M. Kawaguchi,T. Huang,K. Ahmed,M. Balseanu L.Q. Xia,M. Shen,Y. Kim,R. Rooyackers K.D. Meyer,R. Schreutelkamp: IEEE Electron Devices Letters, Vol. 27, no. 6(2006).

DOI: 10.1109/led.2006.875766

Google Scholar

[2] G. Eneman,P. Verheyen A.D. Keersgieter,M. Jurczak, and K.D. Meyer: IEEE Trans. Electron Devices, OnVol. 54, no. 6(2007), p.1446.

DOI: 10.1109/ted.2007.896367

Google Scholar

[3] P. Grudowski, V. Adams, X. Bo, K. Loiko, S. Filipiak, J. Hackenberg, M. Jahanvani, M. Azrak, S. Goktepeli, M. Shroff, W. Liang, S. Lian, V. Kolagunta, N. Cave, C. Wu, M. Foisy, H. Tuan, and J. Cheek: VLSI Symp. Tech. Dig., (2006), p.76.

DOI: 10.1109/vlsit.2006.1705217

Google Scholar

[4] S. Orain,V. Fiori,D. Villanueva,A. Dray, andC. Ortolland: IEEE Trans. Electron Devices, On Vol. 54, no. 4(2007), p.814.

DOI: 10.1109/ted.2007.892026

Google Scholar

[5] S. Orain,V. Fiori,D. Villanueva,A. Dray, andC. Ortolland: IElectron Devices Meeting, IEDM. Technical Digest. International(2000), p.247.

Google Scholar