Formation of Giant SiGe Crystals on Insulator by Self-Organized-Seeding Rapid-Melting Growth

Ryo Matsumura; Hironori Chikita; T. Sadoh; M. Miyao

doi:10.4028/www.scientific.net/AMM.481.27

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 481Formation of Giant SiGe Crystals on Insulator by...

Formation of Giant SiGe Crystals on Insulator by Self-Organized-Seeding Rapid-Melting Growth

Abstract:

Rapid-melting growth of SiGe stripes on insulator without crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the self-organized formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.