Material Removal Mechanisms in Cu Electrochemical Mechanical Polishing

Yan Fei Bian; Wei Jie Zhai

doi:10.4028/www.scientific.net/AMM.490-491.247

Paper Titles

Theoretical Analysis and Experimental Study on Heat-Transfer in Cryogenic Gas Atomization Jet Cooling Nickel-Base Alloy
p.227

Wetting Behavior of Al Melt/C Interface and Al-Ti Melt/C Interface Assisted by AlF₃-KF Salt Eutectic
p.232

Characterisation of Micro Channels in Electrochemical Discharge Machining Process
p.238

Research of the Chemico-Mechanical Practices in Polymer Material Processing by Cutting
p.243

Material Removal Mechanisms in Cu Electrochemical Mechanical Polishing
p.247

Analysis of Heat Pipe Filled with Several Oxide Nanofluids on the Start-Up Process
p.251

Study on Microstructure Evolution during the Cold Roll-Beating of 40Cr
p.256

Nanostructured Surface Effect of Electrode on Doxorubicin Determination
p.262

Study on the Theory of a New Kind of Cutting Technology and the Test Analyses
p.267

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 490-491Material Removal Mechanisms in Cu Electrochemical...

Material Removal Mechanisms in Cu Electrochemical Mechanical Polishing

Abstract:

The material removal mechanisms for Cu electrochemical mechanical planarization (ECMP) including 5-Methyl-1H-Benzotriazole (TTA), hydroxyethylidenedi phosphoric acid (HEDP), and tribasic ammonium citrate (TAC) were investigated by electrochemical techniques, X-ray photoelectron spectrometer (XPS) analysis, and polishing of Cu-coated blanket wafers. The experimental results show that the main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential. This understanding is beneficial for optimization of ECMP processes.