Low Resistance Transparent Electrode

So Hyun Jeong; Ju Youn Kim; Eui Jung Yun; Byung Seong Bae

doi:10.4028/www.scientific.net/AMM.490-491.271

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 490-491Low Resistance Transparent Electrode

Low Resistance Transparent Electrode

Abstract:

Transparent electrodes are used widely for the many kinds of devices. The most widely used material is ITO (indium tin oxide). The attempts to improve the resistance and flexibility have been tried. The low resistance can be achieved by increasing the thickness of the ITO; however, the increase of the thickness results in the decrease of the transmittance of the incident light. Therefore,decrease of the resistance is required without increase of the thickness. We investigated the effect of the metal material on the resistance of the transparent electrode. After deposition of the metal on the ITO, we investigated the resistance of the electrode after annealing. The lowest sheet resistance was obtained for the metal Mo after 500 °C annealing. The sheet resistance 25.6 Ω/ of the ITO was decreased to 9.6 Ω/ without any significant decrease of the transmittance.

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Periodical:

Applied Mechanics and Materials (Volumes 490-491)

Pages:

271-273

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.490-491.271

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Online since:

January 2014

Authors:

So Hyun Jeong, Ju Youn Kim, Eui Jung Yun, Byung Seong Bae

Keywords:

ITO, Low Resistance, Transparent

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References

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