Study of μс-Si:H Thin Films Prepared by RF-PECVD

Abstract:

μc-Si:H thin films have been deposited on the 7059 glass substrate by RF-PECVD. Effects of film thickness on structure and properties of Si thin films were investigated by XRDRamanUV-Vis and precision multimeter. Experimental results indicated that uniform dense microcrystalline silicon thin films can be prepared by rf-PECVD, silicon thin films transferred from a-Si:H to μc-Si:H along with film thickness increased. For μc-Si:H, XRD spectrum occurred (111)(220) and (331) peak, grain size and crystalline volume fraction increased with thickness enhanced, arrived at 82%; optical band gap of μc-Si:H is 2.0~2.36eV and decreased when thickness increased, the transmittance was added firstly and then reduced with film thickness increased, the transmittance curve occurred redshift;the photosensitivity of the thin films was improved firstly and then decreased with thickness increased, which was highest at 104 quantity in the transition zone from a-Si:H to μc-Si:H.

• Periodical: Applied Mechanics and Materials (Volume 492)
• Pages: 235-238
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.492.235
• Online since: January 2014
• Authors: Xiao Jing Wang
• Keywords: Film Thickness, Property, RF-PECVD, Structure, μC-Si:H

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