Research on the Magnetism of Yttrium Doped Zinc Oxide Film

Zhi Huan Lan; Xiu Juan Miao

doi:10.4028/www.scientific.net/AMM.513-517.70

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 513-517Research on the Magnetism of Yttrium Doped Zinc...

Research on the Magnetism of Yttrium Doped Zinc Oxide Film

Abstract:

The magnetism of Y doped ZnO film was calculated by using an accurate full-potential linerized plane-wave and supercell method. To analyzing the results, we find that: The ZnO film containing Zn vacancies is magnetic and the origin of magnetism is Zn vacancies; The Y ions in Y doped ZnO film is +3 and non-magnetic; The formation energy of Zn vacancies in the Y doped ZnO film is smaller than in the ZnO film, so Y favors the formation of V_Zn; The Y doped ZnO film containing Zn vacancies is magnetic.

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Periodical:

Applied Mechanics and Materials (Volumes 513-517)

Pages:

70-73

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.513-517.70

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Online since:

February 2014

Authors:

Zhi Huan Lan*, Xiu Juan Miao

Keywords:

Magnetism, Yttrium, Zinc Oxide (ZnO)

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