A Low-Power 1Kb PCRAM Chip with Elevated Write Performance

Xi Fan; Hou Peng Chen; Qian Wang; Yi Feng Chen; Zhi Tang Song; Min Zhu; Gao Ming Feng

doi:10.4028/www.scientific.net/AMM.543-547.463

Paper Titles

Bar and Plate EGR Cooler Simulation and Experimental Verification
p.441

The Analysis of Bonding Mechanism of CBN Grains for Electroplated Superabrasive Tools
p.448

Research of Electric Vehicles' Discharging Price
p.452

The Motion Planning Research of Bionic Worming Crawling
p.457

A Low-Power 1Kb PCRAM Chip with Elevated Write Performance
p.463

Research of Case-Based Teaching of Electrical and Electronic Technology
p.467

Design of an Initialization Circuit Used in Phase Change Memory Chip
p.471

Reduced Order PEEC Modeling for EMC Problems via Mixed Arnoldi Algorithm and Padé Approximation
p.475

Research of Storage Failure Mechanism on JZX-10M Aeronautic Sealed Relay
p.480

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 543-547A Low-Power 1Kb PCRAM Chip with Elevated Write...

A Low-Power 1Kb PCRAM Chip with Elevated Write Performance

Abstract:

A low-power 1Kb phase change random access memory (PCRAM) chip is designed. The chip uses 1T1R (one transistor one resistor) structure and titanium nitride (TiN) bottom electrode (BE) for reducing power consumption. Besides, the write property of the chip is improved by employing a ramp down pulse generator. The chip is fabricated in 130nm CMOS standard technology. The test result shows a 56% power reduction based on TiN BE compared with tungsten (W) BE, which predicts a new direction to realize the commercialization of PCRAM.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 543-547)

Pages:

463-466

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.543-547.463

Citation:

Cite this paper

Online since:

March 2014

Authors:

Xi Fan, Hou Peng Chen*, Qian Wang, Yi Feng Chen, Zhi Tang Song, Min Zhu, Gao Ming Feng

Keywords:

Low Power, PCRAM, Reset Current, Write Performance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Simpson, R. E., FonsP, A. V. Kolobov, FukayaT, KrbalM, YagiT and TominagaJ: Nat Nano . Vol. 6 (2011), p.501.

Google Scholar

[2] Bez, R. : Electron Devices Meeting (IEDM) (2009).

Google Scholar

[3] Xia, M. J., F. Rao, Z. T. Song, K. Ren, L. C. Wu, B. Liu and S. L. Feng: Chinese Physics Letters . Vol. 30 (2013).

Google Scholar

[4] Lai, S. and T. Lowrey: Electron Devices Meeting (IEDM) (2001), p.36. 5. 1.

Google Scholar

[5] Harnsoongnoen, S. and C. Sa-ngiamsak: Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). Vol. 01 (2009), p.440.

Google Scholar

[6] Gupta, S., V. Saxena, K. A. Campbell and R. J. Baker: Microelectronics and Electron Devices (WMED) (2009).

Google Scholar

[7] Shi, L. P., T. C. Chong, J. M. Li, D. S. C. Koh, R. Zhao, H. X. Yang, P. K. Tan, X. Q. Wei and W. D. Song: Non-Volatile Memory Technology Symposium (2004), p.83.

Google Scholar

[8] De Sandre, G., L. Bettini, A. Pirola, L. Marmonier, M. Pasotti, M. Borghi, P. Mattavelli, P. Zuliani, L. Scotti, G. Mastracchio, F. Bedeschi, R. Gastaldi and R. Bez: Solid-State Circuits Vol. 46 (2011), p.52.

DOI: 10.1109/jssc.2010.2084491

Google Scholar

[9] Daolin, C., C. Houpeng, L. Xi, W. Qian and Z. Song: Non-Volatile Memory Technology Symposium (NVMTS) (2011).

Google Scholar

[10] Kan'an, N., A. Faraclas, N. Williams, H. Silva and A. Gokirmak: Electron Devices Vol. 60 (2013), p.1649.

Google Scholar