Conduction Properties of SiN Films Depositing by RF Magnetron Sputtering

Abstract:

In the work, the resistivity of the SiN film was discussed, the resistivity of the SiN film was influenced by the deposition parameters, such as the sputtering power, deposition temperature, N₂ pressure and ratio of N₂/(N₂+Ar). Only considering the resistivity of the SiN film, the optimal parameters of the film were as below, the sputtering power was 50W, the substrate temperature was 400°C, N₂ pressure was 1Pa, and the ratio of N₂/(N₂+Ar) was 2.5%.

• Periodical: Applied Mechanics and Materials (Volumes 568-570)
• Pages: 1658-1661
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.568-570.1658
• Online since: June 2014
• Authors: Zai Yu Zhang*, Jian Jun Yang, Yan Hui Wu
• Keywords: Depositing Temperature, Magnetron Sputtering, Resistivity, SiN

References

[1] Stamper A K, Fuselier M B, Tian X. Advanced wiring RC delay issues for sub-0. 25-micron generation CMOS [C]. Proceedings of the IEEE 1998 International, California, 1998,: 62-64.

DOI: 10.1109/iitc.1998.704752

[2] Chert Haibo, Zhou Jichang, Li Youzhen. Science in China Series E-Technological Sciences [J]. 2008，39(3): 42-1.

[3] R. Hübner, M. Hecker, N. Matter, et al. Influence of nitrogen content on the crystallization behavior of thin Ta-Si-N diffusion barrier [J]. Thin Solid Films, 2004, 468(1-2): 183-192.

DOI: 10.1016/j.tsf.2004.04.026

[4] Wang Y, Cao F, Shao L, Ding M H. Diffusion barrier capability of Zr-Si films for copper metallization with different substrate bias voltage[J]. Thin Solid Films, 2009, 517(18): 5593-5596.

DOI: 10.1016/j.tsf.2009.01.001

[5] Qi Xie, Yu-Long, Jan Musschoot, Jan Musschoot, et al. Ru thin film grown on TaN by plasma enhanced atomic layer deposition [J]. Thin Solid Films, 2009, 517 (16): 4689-4693.

DOI: 10.1016/j.tsf.2009.03.001

[6] Dung Ching Perng, Kuo Chung Hsu, Shuo-Wen Tsai, et al. Thermal and Electrical Properties of PVD Ru(P) Film as Cu Diffusion Barrier [J]. Microelectronic Engineering, 2010, 87(3): 365-369.

DOI: 10.1016/j.mee.2009.06.007

[7] Tang Weizhong. Thin film materials preparation principle, technology and application[M] Metallurgical Industry Press, 2003, 190-191.

[8] Chen Jianhui, Liu Baoting, Zhao Dongyue. Investigation of Barrier Layer for Cu Interconnection on Si-based Integrate Circuit[J]. Materials Review, 2010, 24(6): 58-63.