Composition Study of Amorphous In_xAs_1-x Films Prepared by Radio-Frequency Sputtering

Abstract:

Amorphous InAs films are deposited on substrates of quartz glass by RF magnetron sputtering technique in different gas ambient. We present a systematic study of the affects of the sputtering parameters on the chemical composition. Amorphous InAs (a-InAs) films have been achieved at higher working pressure when the substrate temperature and RF power are increased respectively. The films composition is controlled by transport phenomena of sputtered atoms from the target to the substrate and by substrate surface dynamics. We study how to improve the sputtering parameters in order to obtain stoichiometric a-InAs films.

• Periodical: Applied Mechanics and Materials (Volumes 568-570)
• Pages: 1653-1657
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.568-570.1653
• Online since: June 2014
• Authors: Yan Ping Yao*, Bao Xue Bo
• Keywords: Composition, InAs, Substrate Temperature, Working Pressure

References

[1] Matsmoto N and Kumabe K: Jpn. J. Appl. Phys. Vol. 18 (1979), p.1011.

[2] Matsmoto N and Kumabe K: Jpn. J. Appl. Phys. Vol. 19 (1980), p.1583.

[3] Knights J C and Lujan R A: J. Appl. Phys. Vol. 49 (1978), p.1291.

[4] Seguin J-L, Hadadi B El, Carchano H, and Aguir K: J. Non-Crystalline Solids, Vol. 238(1998), p.253.

DOI: 10.1016/s0022-3093(98)00689-9

[5] Gras-Marti A, Vallés-Abarca J-A, Moreno-Martin J-C: Plasmas-Surface interactions and Processing of Materials, NATO ASI Series, 1990, p.135.

[6] Gras-Marti A, Vallés-Abarca J-A: J. Appl. Phys. Vol. 54 (1983), p.1071.

[7] Seguin J-L, Hadadi B El, Carchano H, and Aguir K: J. Non-Crystalline Solids, Vol. 183 (1995), p.175.

DOI: 10.1016/0022-3093(94)00564-8

[8] Blakemore J S: J. Appl. Phys. Vol. 53 (1982), p.123.

[9] He Y L, Chen G H, Zhang F Q: Amorphous Semiconductor Physics ( Higher Education Press, china 1980).