Composition Study of Amorphous InxAs1-x Films Prepared by Radio-Frequency Sputtering
Amorphous InAs films are deposited on substrates of quartz glass by RF magnetron sputtering technique in different gas ambient. We present a systematic study of the affects of the sputtering parameters on the chemical composition. Amorphous InAs (a-InAs) films have been achieved at higher working pressure when the substrate temperature and RF power are increased respectively. The films composition is controlled by transport phenomena of sputtered atoms from the target to the substrate and by substrate surface dynamics. We study how to improve the sputtering parameters in order to obtain stoichiometric a-InAs films.
Prasad Yarlagadda and Yun-Hae Kim
Y. P. Yao and B. X. Bo, "Composition Study of Amorphous InxAs1-x Films Prepared by Radio-Frequency Sputtering", Applied Mechanics and Materials, Vols. 568-570, pp. 1653-1657, 2014