Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

Hua Jing Zheng; Chi Zhang; Zheng Ruan

doi:10.4028/www.scientific.net/AMM.575.254

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 575Optimization in Synthesis of ITO Thin Films...

Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

Abstract:

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.

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Periodical:

Applied Mechanics and Materials (Volume 575)

Pages:

254-263

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.575.254

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Online since:

June 2014

Authors:

Hua Jing Zheng*, Chi Zhang, Zheng Ruan

Keywords:

DC Magnetron Sputtering, ITO Thin Films, Orthogonal Test, Process Parameter

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