InSe Nanothin Film with Ar-Gas Low Vacuum Pressure

Abstract:

In_xSe_1-x (x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In₂Se₃ and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In₃Se₂ is polycrystalline and the values of energy gap are E_g=1.44eV for In₂Se₃, E_g=1.16eV for InSe and E_g=0.78eV for In₃Se₂. The same technique used with insert Argon gas at pressure 0.1 mbar where In_xSe_1-x (x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In₂Se₃ are amorphous in nature while the as-deposited film InSe and In₃Se₂ are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are E_g=1.55eV for InSe and E_g=1.28eV for In₃Se₂. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

• Periodical: Applied Mechanics and Materials (Volume 606)
• Pages: 15-18
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.606.15
• Online since: August 2014
• Authors: Falah Mustafa Al-Attar*, Mooroj Ali
• Keywords: Nanotechnology, Semiconductor, Solar Cell, Thin Film

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