Electrical Characterisation of Highly Doped Triangular Silicon Nanowires

Abstract:

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resulting in carrier concentration of 2 x 10¹⁸ cm^-3. After the silicon nanowires were fabricated, they were measured using a dual configuration method which is similar to the four-point probe measurement technique to deduce its resistivity. The data obtained had suggested that doping distribution in the silicon nanowires were lower and this may have been affected by the surface depletion effect. In addition, with respect to carrier mobility, the effective mobility of electrons extracted using the four-point probe data had demonstrated that the mobility of carriers in the silicon nanowire is comparable with the bulk mobility. This is most probably due to the fact that in this research, the quantum confinement effect on these nanowires is not significant.

• Periodical: Applied Mechanics and Materials (Volume 660)
• Pages: 168-172
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.660.168
• Online since: October 2014
• Authors: Nor F. Za’bah, Kelvin S.K. Kwa, Anthony O'Neill
• Keywords: Dual Configuration, Mobility, Silicon Nanowire, Spin-Coating

References

[1] D. H. Petersen et al, Review of electrical characterization of ultra-shallow junctions with micro four-point probes, Journal of Vacuum Science&Technology B, vol. 28, pp. C1C27-C1C33, Jan (2010).

DOI: 10.1116/1.3224898

[2] S. M. Woodruff et al, Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires, Journal of Vacuum Science & Technology B, vol. 26, pp.1592-1596, Jul (2008).

DOI: 10.1116/1.2939256

[3] Nor F. Za'bah et al, Top-Down Fabrication of Single Crystal Silicon Nanowire Using Optical Lithography, Journal of Applied Physics, vol. 112, Issue 2, July (2012).

[4] S. Ingole et al, Charge Transport Characteristics in Boron-Doped Silicon Nanowires, IEEE Transactions on Electron Devices, vol. 55, pp.2931-2938, Nov (2008).

DOI: 10.1109/ted.2008.2005175

[5] I. Kimukin et al, Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition, Nanotechnology, vol. 17, pp. S240-S245, Jun 14 (2006).

DOI: 10.1088/0957-4484/17/11/s03

[6] K. I. Seo, S. Sharma et al, Surface charge density of unpassivated and passivated metal-catalyzed silicon nanowires, Electrochemical and Solid State Letters, vol. 9, pp. G69-G72, 2006 (2006).

DOI: 10.1149/1.2159295

[7] F. Vaurette et al, Resistivity and surface states density of n- and p-type silicon nanowires, Journal of Vacuum Science & Technology B, vol. 26, pp.945-948, May (2008).