Dependence of the Breakdown Voltage of 4H-SiC MESFET’s on the Field Plate and Step-Channel

Abstract:

The breakdown mechanism of the 4H-SiC metal-semiconductor field effect transistor (4H-SiC MESFET) at a large drain bias is explored and the dependence of breakdown voltage on the field-plate and the step-channel is investigated by simulation. The results revealed that the breakdown occurs at the corner of the gate near to the drain. The channel step and the field-plate length have sensitive effect on the breakdown voltage. The breakdown characteristics are improved since the electric field peak is lowered at breakdown point in the step-channel and field-plate structures. The largest breakdown voltage can be achieved by optimizing the field-plate length.

• Periodical: Applied Mechanics and Materials (Volumes 668-669)
• Pages: 803-807
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.668-669.803
• Online since: October 2014
• Authors: Xian Jun Zhang*, Na You
• Keywords: 4H-SiC, Schottky Barrier Field-Effect Transistor, Step-Channel

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