High-Voltage Large-Current 4H-SiC JBS Diodes

Yong Hong Tao; Song Bai; Run Hua Huang; Gang Chen; Ling Wang; Ao Liu; Yun Li; Zhi Fei Zhao

doi:10.4028/www.scientific.net/AMM.713-715.1023

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 713-715High-Voltage Large-Current 4H-SiC JBS Diodes

High-Voltage Large-Current 4H-SiC JBS Diodes

Abstract:

3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm^-3 epilayer and 5.5Х5.5mm² schottky contact area has a blocking voltage (V_b ) of 3.9 kV and a specificon-resistance (Ron) of 10.5 mΩ.cm², with a forward current measured up to 50A at V_F=3.0V. The 4.5kV device with 50 um 1.2E15 cm^-3 epilayer and 5.5Х5.5mm² schottky contact area has a blocking voltage (V_b ) of 5.1 kV and a specificon-resistance (Ron) of 22.9 mΩ.cm², with a forward current of 30A at V_F=3.7V.

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Periodical:

Applied Mechanics and Materials (Volumes 713-715)

Pages:

1023-1026

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.713-715.1023

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Online since:

January 2015

Authors:

Yong Hong Tao*, Song Bai, Run Hua Huang, Gang Chen, Ling Wang, Ao Liu, Yun Li, Zhi Fei Zhao

Keywords:

Floating Guard Rings, High Voltage, Large Current, SiC JBS Diodes

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