Fabrication and High Temperature Characterization of 1200V-15A 4H-SIC JBS Diode

Ao Liu; Yong Hong  Tao; Song Bai; Gang Chen; Ling Wang; Run Hua Huang; Yun Li; Zhi Fei Zhao

doi:10.4028/www.scientific.net/AMM.713-715.1034

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 713-715Fabrication and High Temperature Characterization...

Fabrication and High Temperature Characterization of 1200V-15A 4H-SIC JBS Diode

Abstract:

1200V-15A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on SiC epitaxy and device technology. By adopting the proper SBD metal,optimized structures and fabrication process, we succeeded in achieving good balance between blocking voltage and on-resistance, especially at high temperature to 200°C. Furthermore, the fabricated diode have a fast recovery time of 30ns, and its dynamic characteristics are constant at high temperature.

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Periodical:

Applied Mechanics and Materials (Volumes 713-715)

Pages:

1034-1037

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.713-715.1034

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Online since:

January 2015

Authors:

Ao Liu*, Yong Hong Tao, Song Bai, Gang Chen, Ling Wang, Run Hua Huang, Yun Li, Zhi Fei Zhao

Keywords:

4H-SiC, High Temperature Characteristics, Junction Barrier Schottky (JBS) Diode

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References

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