Research on the Package of High Voltage SiC JBS

Gang Chen; Ya Nan Li; Lin Wang; Ao Liu; Song Bai; Dong Hua Li; Qing Meng Zhang

doi:10.4028/www.scientific.net/AMM.713-715.1038

Paper Titles

High-Voltage Large-Current 4H-SiC JBS Diodes
p.1023

Steady-State Operation Analysis for a Three-Winding Single-Phase Capacitor Motor
p.1027

Design of DDS Based on FPGA Technology
p.1031

Fabrication and High Temperature Characterization of 1200V-15A 4H-SIC JBS Diode
p.1034

Research on the Package of High Voltage SiC JBS
p.1038

High-Speed Low-Power Bulk-Controlled Sense-Amplifier D Flip-Flop
p.1042

Design of an Ultra-Wideband Wilkinson Power Divider in Modern Electronic Engineering
p.1048

RTDS-Based Modeling and Simulation for Control System of HVDC
p.1052

AGV Magnetic Sensor Data Acquisition System
p.1056

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 713-715Research on the Package of High Voltage SiC JBS

Research on the Package of High Voltage SiC JBS

Abstract:

According to the application of the high voltage SiC devices, studying the package of three kinds of SiC dies with different metals. Experiments show that all die wire bonding and shear strength measurement up to standard, and provide three kinds of packages for different applications, at the same time, filling the needs of producing. The purpose of the shear strength test is to determine the integrity of materials used to attach SiC die to package substrates.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 713-715)

Pages:

1038-1041

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.713-715.1038

Citation:

Cite this paper

Online since:

January 2015

Authors:

Gang Chen*, Ya Nan Li, Lin Wang, Ao Liu, Song Bai, Dong Hua Li, Qing Meng Zhang

Keywords:

Shear Force, SiC JBS, Wire Bonding

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Karl O. Dohnke, W. Bartsch, R. Schoerner, et. al. A molded package optimized for high voltage SiC-devices [C]. Materials Science Forum Vols. 679-680 (2011) pp.762-765.

DOI: 10.4028/www.scientific.net/msf.679-680.762

Google Scholar

[2] Habib A Mustain, Alexander B. Lostetter, William D. Brown, Evaluation of Gold and Aluminum wire Bond Performance for High Temperature (500°C) Silicon Carbide (SiC) Power Modules, Proc. of 2005 Electronic Components and Technology Conference, pp.1623-1628.

DOI: 10.1109/ectc.2005.1442008

Google Scholar

[3] John G. Bai, Jesus N. Calata, and Guo-Quan Lu. Processing and Characterization of Nanosilver Pastes for Die-Attaching SiC Devices. IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, VOL. 30, NO. 4, OCTOBER 2007 pp.241-245.

DOI: 10.1109/tepm.2007.906508

Google Scholar

[4] Puqi Ning, Rixin Lai, Daniel Huff, et. al. SiC Wirebond Multichip Phase-Leg Module Packaging Design and Testing for Harsh Environment. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 25, NO. 1, JANUARY 2010 pp.16-23.

DOI: 10.1109/tpel.2009.2027324

Google Scholar

[5] Siegbert Haumann, Martin Becker, Jacek Rudzki, et. al. Novel Bonding and Joining Technology for Power Electronics Enabler for improved lifetime, reliability, cost and power density. 2013 28th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2013 pp.622-626.

DOI: 10.1109/apec.2013.6520275

Google Scholar