Fabrication and Characterisation of 1200V 4H-SiC VJFET

Gang Chen; Song Bai; Ao Liu; Run Hua Huang; Yong Hong  Tao; Lin Wang; Yun Li; Zhi Fei Zhao

doi:10.4028/www.scientific.net/AMM.716-717.1434

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 716-717Fabrication and Characterisation of 1200V 4H-SiC...

Fabrication and Characterisation of 1200V 4H-SiC VJFET

Abstract:

Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device’s current density is 360 A/cm² and current is 11 A at V_G= 3 V and V_D = 2 V, with related specific on-resistance 5.5 mΩ·cm². The device exceeds 1200 V at gate bias V_G = -10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200 °C high temperature.

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Periodical:

Applied Mechanics and Materials (Volumes 716-717)

Pages:

1434-1437

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.716-717.1434

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Online since:

December 2014

Authors:

Gang Chen*, Song Bai, Ao Liu, Run Hua Huang, Yong Hong Tao, Lin Wang, Yun Li, Zhi Fei Zhao

Keywords:

4H-SiC, Implant, Ohmic, Trench, VJFET

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References

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