Oxidation of TiAlCrSiN Thin Films at 1000°C in Air

Min Jung Kim; Dong Bok Lee

doi:10.4028/www.scientific.net/AMM.719-720.127

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 719-720Oxidation of TiAlCrSiN Thin Films at 1000°C in Air

Oxidation of TiAlCrSiN Thin Films at 1000°C in Air

Abstract:

TiAlCrSiN thin films consisting of alternating TiCrN and AlSiN nanolayers were deposited by cathodic arc plasma deposition, and oxidized at 1000°C in air. When oxidized for 10 h, about 1 μm-thick oxide sale formed, and its surface was covered with numerous tiny oxide crystallites. When oxidized for 30 h, about 2.5 μm-thick oxide scale formed, and began to spall from the surface. When oxidized for 80 h, the oxide sale was about 12.2 μm-thick. The film had a reasonable oxidation resistance due mainly to Al, Cr, and Si, which formed protective oxides.