Effects of Indium (In) to the Efficiency Tandem Cell Ga_1-xIn_xP/Silicon for Solar Cell Application

Abstract:

In this paper, the contribution of Indium (In) to the Gallium Phosphide (GaP) composition of solar cell was investigated to know the effectiveness of the In when its being substitute to GaP layer on the top layer of Silicon (Si) substrate. The substitution was made to the Ga_1-xIn_xP for the range of (0≤x≤0.5). The highest efficiency was 10.1235% for x=0.5 for the Ga_1-xIn_xP. In contribution shows a higher efficiency compared to single layer GaP which only about 5.40608%. As the x composition increased, the efficiency becomes higher for each composition increment. The rate of efficiency, increased about 88% and improves current density with a value up to 13.1134mA/cm².The efficiency obtained in this work is considerably high using simulation tools compared to the previous record for InGaP/Silicon reported in Feb 2014 about 6~11.2% by fabrication method.

• Periodical: Applied Mechanics and Materials (Volumes 754-755)
• Pages: 1182-1186
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.754-755.1182
• Online since: April 2015
• Authors: Suhaila Mohd Zahari, Rozana Aina Maulat Osman, Mohd Natashah Norizan, Ili Salwani Mohamad, Azura Malini, Sanna Taking
• Keywords: Ga_1-xIn_xP Solar Cell, Gallium Phosphide (GaP), Indium (In), Silvaco TCAD

References

[1] T. Takamoto et al, High efficiency InGaP solar cells for InGaP/GaAs tandem cell application, Proc. 1994 IEEE 1st World Conf. Photovolt. Energy Convers, vol. 2, (1994) p.1729–1732.

DOI: 10.1109/wcpec.1994.520552

[2] D. C. Law et al, Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems, Sol. Energy Mater. Sol. Cells, vol. 94, no. 8, (2010) p.1314–1318.

DOI: 10.1016/j.solmat.2008.07.014

[3] N. Shigekawa, M. Morimoto, S. Nishida, and J. Liang, Surface-activated-bonding-based InGaP-on-Si double-junction cells, vol. 05, (2014) , p.53–56.

DOI: 10.7567/jjap.53.04er05

[4] J. Novák, S. Hasenöhrl, R. Kúdela, and M. Kučera, Growth and characterization of layers with composition close to crossover from direct to indirect band gap, J. Cryst. Growth, vol. 275, no. 1–2, (2005) p.1281–1286.

DOI: 10.1016/j.jcrysgro.2004.11.076

[5] Donald A. Naemen, Basic Principal: Semiconductor Physics and Devices, Fourth Edition, University of New Mexico, McGraw Hill, (2012).

[6] William F. Smith, Javad Hashemi, Foundations of Material Science And Engineering, Fifth Edition, University of Central Florida, McGraw Hill, (2011).

[7] Tomas Markvart, Solar Electricity, Second Edition, University of Southampton, John Wiley&Sons, (2000).