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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 764-765Impact of Parasitic Capacitor to the GaN HEMT...

Impact of Parasitic Capacitor to the GaN HEMT Devices

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Abstract:

The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spike and damage the GaN HEMT.

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Periodical:

Applied Mechanics and Materials (Volumes 764-765)

Pages:

515-520

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.764-765.515

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Online since:

May 2015

Authors:

Chia Lin Chen*, Chih Huan Fang, Yuan Chao Niu, Yaow Ming Chen

Keywords:

Gallium Nitride (GaN), High-Electron-Mobility Transistor (HEMT), Parasitic Capacitor, Parasitic Inductor

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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