Photon-Assisted Electrodeposition of &lt;0001&gt;-n-ZnO/&lt;111&gt;-p-Cu2O Photovoltaic Devices with TiO2 Intermediate Layer

Mohd Zamzuri; Junji Sasano; Fariza binti Mohamad; Masanobu Izaki

doi:10.4028/www.scientific.net/AMM.773-774.622

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 773-774Photon-Assisted Electrodeposition of...

Photon-Assisted Electrodeposition of <0001>-n-ZnO/<111>-p-Cu₂O Photovoltaic Devices with TiO₂ Intermediate Layer

Abstract:

The <111>-Cu₂O/<0001>-ZnO photovoltaic (PV) device has been constructed by a electrodeposition f Cu₂O layer followed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO₂ layer prepared by a sol-gel technique on the photovoltaic performance was investigated. The structural, optical, and electrical characterizations were carried out with XRD, FE-SEM, UV-Vis-NIR spectrophotometer, and solar simulator. The performance of AZO/<0001>-ZnO/TiO₂/<111>-Cu₂O PV-devices changed depending on the preparation condition for the TiO₂ layer, and the short-circuit current density of 4.86 mAcm^-² has been obtained for the PV device prepared under optimized condition.

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Periodical:

Applied Mechanics and Materials (Volumes 773-774)

Pages:

622-625

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.773-774.622

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Online since:

July 2015

Authors:

Mohd Zamzuri*, Junji Sasano, Fariza binti Mohamad, Masanobu Izaki

Keywords:

Photon-Assisted Electrodeposition, Sol-Gel Method, TiO₂ Layer, ZnO/Cu₂O Heterojunction

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