Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Eswar, Kevin Alvin; Lepit, Ajis; Rasmidi, Rosfayanti; Husairi, F.S.; Afaah, A.N.; Noor Aadilla, Abdul Aziz; Asib, N.A.M.; Aziz, Azlinda; Khusaimi, Zuraida; Alrokayan, Salman A.H.; Khan, Haseeb A.; Rusop, Mohamad; Abdullah, Saifollah

doi:10.4028/www.scientific.net/AMM.773-774.626

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Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Abstract:

In this work, seeded porous silicon (PSi) was used as a substrate in the growth of ZnO nanostructures. PSi was prepared by electrochemical etching method. ZnO thin films as seeded were deposited via sol-gel spin coating method. ZnO nanostructures were grown on seeded PSi using hydrothermal immersion method. In order to study the effect of post-heat treatment on the substrate, post annealing temperature were varied in the range of 300 to 700 °C. The FESEM results shows ZnO thin film composed of nanoparticles were distributed over the PSi surface. Based on AFM characterization, the smoothest surface was produced at post annealing temperature of 500 °C. There are two different peaks appeared in PL characterization. The peak in near-UV range is belonging to ZnO thin films while a broad peak in visible range can be attributed to ZnO defects and PSi surface. In addition, FESEM, XRD and PL were used to characterize the ZnO nanostructures. The FESEM results revealed ZnO nano-flower were successfully grown on seeded PSi. Hexagonal wurtzite of ZnO with dominated by the plane (100), (002), and (101) was found by XRD characterization. Two different peaks in UV range and visible range can be attributed to ZnO nano-flower and various defects of ZnO, respectively.

Info:

Periodical:

Applied Mechanics and Materials (Volumes 773-774)

Main Theme:

International Integrated Engineering Summit 2014

Edited by:

Al Emran Ismail, Amir Khalid, Aziman Madun, Ahmad Kueh Beng Hong, Fariza Mohamad, Hamidon Salleh, Kamaruddin Ambak, Mohammad Kamil Abdullah, Mohd Azlis Sani Md Jalil, Mohd Ezree Abdullah, Mohd Fahrul Hassan, Mohd Halim Irwan Ibrahim et.al.

Pages:

626-631

DOI:

10.4028/www.scientific.net/AMM.773-774.626

Citation:

K. A. Eswar et al., "Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures", Applied Mechanics and Materials, Vols. 773-774, pp. 626-631, 2015

Online since:

July 2015

Authors:

Kevin Alvin Eswar *, Ajis Lepit, Rosfayanti Rasmidi, F.S. Husairi, A.N. Afaah, Abdul Aziz Noor Aadilla, N.A.M. Asib, Azlinda Aziz, Zuraida Khusaimi, Salman A.H. Alrokayan, Haseeb A. Khan, Mohamad Rusop, Saifollah Abdullah

Keywords:

Annealing Temperature, Electrochemical Etching, Hydrothermal Immersion, Porous Silicon, Sol-Gel, ZnO Nanostructures

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