Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

Chayada Surawanitkun

doi:10.4028/www.scientific.net/AMM.781.172

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 781Effect of MgO Barrier Thickness with Tilted...

Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

Abstract:

Recently, there has been a growing interest in the thermal stability in magnetic tunnel junction (MTJ) devices with an aspect of the temperature increment during current-induced magnetization switching (CIMS) process. In this work, the temperature increment is explored with factors of the tile of the initial magnetization direction in free layer, θ₀, and the MgO layer thickness for different pulse durations, t_p. The results show that the highest temperature in MTJ nanopillar is significant at the θ₀of1°-5° and the pulse duration t_p< 0.4 ns. Moreover, the temperature results with decreasing the MgO layer thickness are not considerable difference at θ₀of1°-5° for the same t_p.

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Periodical:

Applied Mechanics and Materials (Volume 781)

Pages:

172-175

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.781.172

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Online since:

August 2015

Authors:

Chayada Surawanitkun*

Keywords:

Current-Induced Magnetization Switching, Joule Heating, Magnetic Tunnel Junction

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