Material Characteristics of Zinc Oxide Doped Aluminum for Microharvesting

Abstract:

Material characteristics of Zinc Oxide doped Al are investigated for microharvester. The microharvester include two parts, the first part is zigzag structures on silicon wafer using MEMS fabrication, and the second part is epitaxial ZnO with doping Al nanostructures on ITO glass using aqueous solution. The effects of the growth temperature, growth concentration, Al-doped for ZnO epitaxial growth, and AZO microharvesting are determined. Results show the percent transmittance decreases with increasing growth concentration ratio and the peak intensity of the (002) orientation increased with increasing growth temperature. The ZnO doped Al with zigzag structures have good efficiency of microharvesting due to its larger geometrical strain to area ratio.

• Periodical: Applied Mechanics and Materials (Volumes 80-81)
• Pages: 245-249
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.80-81.245
• Online since: July 2011
• Authors: Wen Yang Chang, Te Hua Fang, Cheng Hong Syu
• Keywords: Aluminum (Al), Doped, Microharvesting, V-Zigzag, Zinc Oxide (ZnO)

References

[1] Y. Cao, L. Miao, S. Tanemura, M. Tanemura, Y. Kuno, Y. Hayashi and Y. Mori, J. J. Appl. Phys., 45 (2006), 1623-1628.

DOI: 10.1143/jjap.45.1623

[2] L. W. Ji, S.J. Young, T. H. Fang, C. H. Liu, Appl. Phys. Lett. 90, 033109 (2007).

[3] S. J. Young, L.W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, X. L. Du, Acta Mater. 55, 329 (2007).

[4] J. Cheng, X. Zhang, Z. Luo, Physica E 31, 235 (2006).

[5] S. N. Cha, J. E. Jang, Y. Chio, G. A. J. Amaratunga, Appl. Phys. Lett. 89, 263102 (2006).

[6] P. Kadam, C. Agashe, and S. J. Mahamuni, 104 (2008) J. Appl. Phys. 103501.

[7] K. Y. Wu, C. C. Wang, and D. H. Chen, 18 (2007) Nanotechnology 305604.

[8] X. Y. Xue, L. M. Li, H. C. Yu, Y. J. Chen, and Y. G. Yang, Appl. Phys. Lett. 89 (2006) 043118.

[9] B. H. Kong, M. K. Choi, H. K. Cho, J. H. Kim, S. Baek, and J. H. Lee, Electrochem. Solid-State Lett., 13 (2010) K12-K14.

[10] S. Mondal, K. P. Kanta, and P. Mitra, Journal of Physical Sciences, 12 (2008) 221-229.

[11] W. Y. Chang, T. H. Fang, C. I Weng, and S. S. Yang, Applied Physics A, 102 (2010) 705-711.

[12] K. Elen, H. V. den Rul, A. Hardy, M. K. V. Bael, J. DHaen, R. Peeters, D. Franco, and J. Mullens, Nanotechnology, 20 (2009) 055608.

DOI: 10.1088/0957-4484/20/5/055608

[13] J. Kim, J. H. Yun, S. W. Jee, Y. C. Park, M. Ju, S. Han, Y. Kim, J. H. Kim, W. A. Anderson, J. H. Lee, J. Yi, Materials Letters, 65 (2011) 786–789.

DOI: 10.1016/j.matlet.2010.11.065

[14] Z. Zhan, J. Zhang, Q. Zheng, D. Pan, J. Huang, F. Huang, and Z. Lin, Crystal Growth & Design, 11 (2011) 21-25.

[15] S. Cho, S. H. Jung, J. W. Jang, E. Oh, and K. H. Lee, Crystal Growth & Design, 8 (2008) 4553-4558.

[16] Y. T. Yin, W. X. Que, C. H. Kam, J. Sol-Gel Sci. Technol., 53 (2010) 605-612.