Borosilicate Frit Addition Impact on the Structure and Electric Behavior of ZnO Nanoparticle-Based Varistors

Abstract:

In this study, ZnO-Bi₂O₃-Mn₂O₃ varistors fabricated from the nanoparticle size of ZnO powder and doped with borosilicate frit were prepared via the conventional ceramic processing method. The influence of different borosilicate frit concentrations (0-3.0 mol%) on the sintering, microstructure enhancement, and nonlinear behavior of the ZnO-Bi₂O₃-Mn₂O₃ system was investigated. Results show that the borosilicate frit was liquefied to improve the density of the ceramic during sintering and found to have significant effects on the ZnO varistors, especially on enhancing grain growth even at a low doping concentration of only 0.5% mol. The strong solid-state reaction in the varistor made from 20 nm ZnO powder during sintering may be attributed to the high surface area of the 20 nm ZnO nanoparticles. X-ray diffraction analysis indicated that the addition of borosilicate frit to the ZnO-Bi₂O₃-Mn₂O₃ varistor system results in the formation of Zn₄O(BO₂)₆ during sintering if too much borosilicate frit was added (over 0.5% mol). Borosilicate frit doping also significantly influenced the electrical properties of the varistor with a marked drop in the breakdown voltage from 545 V to 188 V with increase of borosilicate frit doping concentration. The resistivity also experienced a dramatic drop from 535.7 kΩ.cm to 133.5 kΩ.cm with increase of borosilicate frit doping contents. Therefore, borosilicate frit doping can be used to control the structural properties and breakdown voltage of ZnO-Bi₂O₃-Mn₂O₃ varistor system fabricated from 20 nm ZnO powder.

• Periodical: Applied Mechanics and Materials (Volume 835)
• Pages: 9-14
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.835.9
• Online since: May 2016
• Authors: Rabab Khalid Sendi*, Ayman Munshi
• Keywords: Borosilicate Frit, Electrical Properties, Microstructure, Varistor, ZnO Nanoparticles

References

[1] M. Matsuoka, Nonohmic properties of zinc oxide ceramics. J. Appl. Phys. 10(6) (1971) 736-746.

[2] J.F. Yan, W.W. Rhodes, Preparation and properties of TiO2 varistors. Appl. Phys. Lett. 40(6) (1982) 536-537.

[3] A. Glot, et al. Dependence of the electrical conductivities of the semiconductors ZnO-SnO2-Bi2O3 on the temperature and additional heat-treatment procedure. Inorg. Mater. 10(12) (1974) 1866-1868.

[4] S. Hingorani, D. Shah, M. Multani, Effect of process variables on the grain growth and microstructure of ZnO-Bi2O3 varistors and their nanosize ZnO precursors. J. Mater. Res. 10(2) (1995) 461-467.

DOI: 10.1557/jmr.1995.0461

[5] Y.L. Chai, et al. Effects of borosilicate glass addition on the structure and dielectric properties of ZnTiO3 ceramics. Mater. Res. Bull. 43(2) (2008) 257-263.

DOI: 10.1016/j.materresbull.2007.03.016

[6] F. Selim, et al. Low voltage ZnO varistor: Device process and defect model. J. Appl. Phys. 51(1) (1980) 765-768.

DOI: 10.1063/1.327338

[7] J. Orton, et al. The mechanism of photoconductivity in polycrystalline cadmium sulphide layers. J. Appl. Phys. 53(3) (1982) 1602-1614.

DOI: 10.1063/1.330618

[8] Z. Zhou, et al. Effects of dopants and hydrogen on the electrical conductivity of ZnO. J. European Ceram. Soc. 24(1) (2004) 139-146.

[9] M. Peiteado, et al. Preparation of ZnO-SnO2 ceramic materials by a coprecipitation method. Bull. Spanish Soc. Ceram. Glass, 45(3) (2006) 158-162.

[10] C.W. Nahm, Al doping effect on electrical and dielectric aging behavior against impulse surge in ZPCCYA-based varistors. Mater. Sci. Eng. B. 170(1) (2010) 123-128.

DOI: 10.1016/j.mseb.2010.03.036

[11] R.L. Petritz, Theory of photoconductivity in semiconductor films. Phys. Rev. 104(6) (1956) 1508.

DOI: 10.1103/physrev.104.1508

[12] A. Jonscher, A many body model of dieletric polarisation in solids. II. The universal model. Phys. Status Solidi (B), 84(1) (1977) 159-166.

DOI: 10.1002/pssb.2220840117