Effect of Al Sputtering Current on Structure of CrAlN Thin Films Prepared by Reactive DC Magnetron Co-Sputtering

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Chromium aluminium nitride (CrAlN) thin films were deposited on Si by reactive DC magnetron co-sputtering technique. The effect of Al sputtering current (IAl) on the crystal structure, elemental composition, thickness, microstructure and hardness were determined by XRD, EDS, AFM and FE-SEM and Nanoindentation, respectively. The results showed that, the as-deposited films were formed as a (Cr,Al)N solid solution with low Al sputtering current, whereas the amorphous structure can be found at high Al sputtering current. The film thickness and roughness was in range of 347 - 1047 nm and 1.45 - 3.37 nm, respectively. The elemental composition of the films varied with the Al sputtering current. The FE-SEM results indicated that the simultaneous evolution in grain refinement with cross-section microstructure through the Al sputtering current. The film hardness increased from 36 GPa to 46 GPa with increasing of Al contents.

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322-325

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June 2017

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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