Carbon Thin Film on Silicon by Acetylene DC Plasma Deposition System

Petcharin Tunkam; Chupong Pakpum

doi:10.4028/www.scientific.net/AMM.866.305

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 866Carbon Thin Film on Silicon by Acetylene DC Plasma...

Carbon Thin Film on Silicon by Acetylene DC Plasma Deposition System

Abstract:

This work aims to develop a low pressure DC plasma deposition system to coat carbon thin film on silicon substrate. The system use a parallel of grounding iron electrode and cathode copper electrode to ignite the plasma. The vacuum pressure was achieved by two stage rotary vane vacuum pump which is capable to reach ultimate pressure at 2×10^-1 Pa under a glass chamber. The carbon thin films was deposited on silicon substrate by pure acetylene plasma with gas flow rate at 30 ml/min at total operating pressure of approximately at -70 cmHg reading by analog dial vacuum gauge. Energy Dispersive X-Ray spectroscopy was used to indicate the elements contained in the film. The morphology and the thickness of the film was investigated by scanning electron microscope. Raman analysis showed peak at around 1345 cm^-1 (D-peak) and 1579 cm^-1 (G-peak), by utilizing I_D and I_G can be evaluated that there are 46.45% of sp³ contained in deposited film.

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Periodical:

Applied Mechanics and Materials (Volume 866)

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305-308

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.866.305

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Online since:

June 2017

Authors:

Petcharin Tunkam, Chupong Pakpum*

Keywords:

Acetylene, Carbon Thin Film, DC Plasma, Silicon

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