Tribo-Electrochemical Performance of Polycrystalline Silicon during ECMP Simulating Process

Abstract:

The tribo-electrochemical performance of polycrystalline silicon was studied by Tafel polarization curves and electrochemical impedance spectroscopy (EIS), based on which the electrochemical mechanical planarization (ECMP) simulating test was done to investigate the effects of applied potentials on friction and material removal rate (MRR) with an ECMP simulating tester. According to the research, a suitable anode polarization potential is advantageous to promote the forming of passivation film with better corrosion inhibition in alkaline CeO₂ polishing liquid, and forming of passivation film on silicon surface can increase both the friction between polishing pad and specimen and the MRR of silicon. This result provides theoretical supports and experimental bases for ECMP of silicon wafer to increase its polishing efficiency.

• Periodical: Advanced Materials Research (Volume 1017)
• Pages: 423-428
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1017.423
• Online since: September 2014
• Authors: Wen Jie Zhai, Jin Hu Wang
• Keywords: ECMP, Material Removal Rate (MRR), Passivation Film, Polycrystalline Silicon, Tribo-Electrochemical

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