Influence of Surface Integrity in Silicon Wafer Thickness Measurements by Reflection Spectroscopy

Teppei Onuki; Ryusuke Ono; Hirotaka Ojima; Jun Shimizu; Li Bo Zhou

doi:10.4028/www.scientific.net/AMR.1017.681

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1017Influence of Surface Integrity in Silicon Wafer...

Influence of Surface Integrity in Silicon Wafer Thickness Measurements by Reflection Spectroscopy

Abstract:

Wafer thickness meter by reflection spectroscopy is used for on-site thickness inspections in wafer thinning process, because of its excellent properties as high measurement accuracy in very thin wafers inspections by non-contact sensing. In practice, ground surfaces are not ideal flat surfaces. Thus the spectra suffers influences of the surface roughness and the waviness, as modifying spectral features by optical diffusion, and as decreasing the reflection received by dispersion of propagating directivity. In this paper, we investigate how the surface integrities of ground wafer surfaces are involved in the thickness measurements by both theoretical and experimental approach, to investigate the requirements in sample conditions and to guarantee the accuracy of the measurements.

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Periodical:

Advanced Materials Research (Volume 1017)

Pages:

681-685

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1017.681

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Online since:

September 2014

Authors:

Teppei Onuki*, Ryusuke Ono, Hirotaka Ojima, Jun Shimizu, Li Bo Zhou

Keywords:

Fabry-Perot Interference, Surface Roughness (SR), Visibility, Wafer Inspection, Waviness

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References

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DOI: 10.4028/www.scientific.net/amr.325.672

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DOI: 10.4028/www.scientific.net/amr.797.549

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