Micro-Quality Control on Ultra-Precision Machining of Sapphire Substrates

Abstract:

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This paper proposed a new approach to control the micro-quality of sapphire substrate, in order to grow GaN on substrate. The main factors that influence macro-quality are the method of slicing, grinding and polishing. Thread speed of slicing is less than 0.5m/s. Ductile mode grinding of substrate is achieved by #3000 diamond wheel and feed of 1μm/r. The suitable polishing conditions are that the SiO2 grain size is less than 10nm, the concentration SiO2 is 3%, pH value of polishing liquid is 10.5 and polishing stress is 190Pa. The undamaged substrates have been obtained steadily. The surface roughness RMS is less than 0.4 nm.

Info:

Periodical:

Advanced Materials Research (Volumes 102-104)

Edited by:

Guozhong Chai, Congda Lu and Donghui Wen

Pages:

738-741

DOI:

10.4028/www.scientific.net/AMR.102-104.738

Citation:

H. Zhou et al., "Micro-Quality Control on Ultra-Precision Machining of Sapphire Substrates", Advanced Materials Research, Vols. 102-104, pp. 738-741, 2010

Online since:

March 2010

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Price:

$35.00

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