Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

Mei Jun Yang

doi:10.4028/www.scientific.net/AMR.1058.244

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1058Preparation and Electrical Property of Mg2Si Thin...

Preparation and Electrical Property of Mg₂Si Thin Film by Pulsed Laser Deposition

Abstract:

Mg₂Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg₂Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg₂Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg₂Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg₂Si thin film were detected. The results showed that the maximal resistivity of Mg₂Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg₂Si thin film as n-type semiconductor.

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Periodical:

Advanced Materials Research (Volume 1058)

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244-247

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https://doi.org/10.4028/www.scientific.net/AMR.1058.244

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Online since:

November 2014

Authors:

Mei Jun Yang*

Keywords:

Annealing Procedure, Electrical Properties, Mg₂Si Thin Film, Pulsed Laser Deposition

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