Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

Li Jun Xie; Xian Zheng Liu; Jin Yuan Li; Kun Shan Yu

doi:10.4028/www.scientific.net/AMR.1070-1072.1241

Paper Titles

Research on Identification Model of Stator Core Temperature Rise of a Generator
p.1216

Study on Optimal Dynamic Braking Resistor of Induction Motor
p.1222

A Complete Decoupling PI Control of UPQC in α-β Coordinate System
p.1228

Sliding Mode Variable Structure Direct Instantaneous Power Control of Grid-Connected Converter with an LCL Filter
p.1234

Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter
p.1241

Analysis of PCC Point Harmonics Caused by Nonlinearities of Grid-Tied PV Inverters
p.1246

Harmonic Characteristic Analysis of Five-Phase Space Vector PWM
p.1253

Research on Constant Frequency Electrical Angle Start Method of LCI
p.1258

The Development of Multi-Functional Multi-Level Variable Voltage Variable Frequency Power Supply
p.1263

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 1070-1072Simulation Analysis of Snubber Circuit for SiC...

Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

Abstract:

SiC MOSFET, as a promising power semiconductor devices, has attracted attention from many laboratories and companies for its super performance in high temperature, high voltage and high frequency applications. To protect the devices from overvoltage induced by parasitic inductance in high frequency applications, snubber circuit is a must. In this paper, simulation of snubber circuit in a high frequency PWM inverter is invested, under different numbers of snubber circuit , parasitic parameters, different kinds of load and whether a SiC SBD exsits. Some useful conclusions are obtained to help design more perfect snubber circuit.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 1070-1072)

Pages:

1241-1245

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1070-1072.1241

Citation:

Cite this paper

Online since:

December 2014

Authors:

Li Jun Xie*, Xian Zheng Liu, Jin Yuan Li, Kun Shan Yu

Keywords:

Pspice Simulation, SiC MOSFET, Snubber Circuit

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Information on http: /www. rohm. com/web/global/sic.

Google Scholar

[2] Information on http: /www. cree. com/Power/Products.

Google Scholar

[3] Ho, C.N. -m.; Canales, F.; Pettersson, S.; Escobar, G.; Coccia, A; Oikonomou, N., Performance evaluation of full SiC switching cell in an interleaved boost converter for PV applications, Energy Conversion Congress and Exposition (ECCE), 2011 IEEE , vol., no., p.1923, 1927, 17-22 Sept. (2011).

DOI: 10.1109/ecce.2011.6064021

Google Scholar

[4] Mostaghimi, O.; Wright, N.; Horsfall, A, Design and performance evaluation of SiC based DC-DC converters for PV applications, Energy Conversion Congress and Exposition (ECCE), 2012 IEEE , vol., no., p.3956, 3963, 15-20 Sept. (2012).

DOI: 10.1109/ecce.2012.6342163

Google Scholar

[5] Hinata, Y.; Horio, M.; Ikeda, Y.; Yamada, R.; Takahashi, Y., Full SiC power module with advanced structure and its solar inverter application, Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE , vol., no., p.604, 607, 17-21 March (2013).

DOI: 10.1109/apec.2013.6520272

Google Scholar