Effects of Cu/Ba Ratio in Precursor on MOCVD-Deposited YBa2Cu3O7-x Films on YYC Buffered Ni-W Alloy Tape

Fei Zhang; Jie Xiong; Rui Peng Zhao; Yan Xue; Bo Wan Tao

doi:10.4028/www.scientific.net/AMR.1082.95

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1082Effects of Cu/Ba Ratio in Precursor on...

Effects of Cu/Ba Ratio in Precursor on MOCVD-Deposited YBa₂Cu₃O_7-x Films on YYC Buffered Ni-W Alloy Tape

Abstract:

To study the effects of Cu/Ba ratio of precursor on YBa₂Cu₃O_7-x (YBCO) film, we have employed the technique of metal-organic chemical vapor deposition to prepare 500 nm thick YBCO films on CeO₂/YSZ/Y₂O₃ (YYC) buffered Ni-W alloy tapes at series of Cu/Ba ratios of precursor. The analysis obtained from X-ray diffraction and scanning electron microscope revealed that the YBCO films crystallized better and became more continuous and denser as Cu/Ba ratio increased from 0.81 to 1.00, yielding that the critical current density (J_c) of YBCO films at 77K and 0T rose from 1.0 MA/cm² to 1.4 MA/cm². Moreover, the energy dispersive spectroscopy indicated that the increase in Cu/Ba ratio of precursor made the Cu/Ba ratio of the YBCO film matrix closer to the theoretical value of 1.5. However, for the Cu/Ba ratio of precursor in the range of 1.00~1.21, the crystallization and texture deteriorated severely and many unexpected precipitates of Ba-Cu-O and Cu-O arose, resulting in the dramatic drop of J_c from 1.4 MA/cm² to 0.1 MA/cm².

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Advanced Materials Research (Volume 1082)

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95-99

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https://doi.org/10.4028/www.scientific.net/AMR.1082.95

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December 2014

Authors:

Fei Zhang, Jie Xiong*, Rui Peng Zhao, Yan Xue, Bo Wan Tao

Keywords:

Cu/Ba Ratio, MOCVD, YBCO Film, YYC Buffer

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