Influence of Annealing Temperature on the Properties of Zn-Sb Composite Thin Films by Magnetron Sputtering

Yu Huan Sun; Juan Qin; Guo Hua Wang; Wei Min Shi

doi:10.4028/www.scientific.net/AMR.1096.76

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1096Influence of Annealing Temperature on the...

Influence of Annealing Temperature on the Properties of Zn-Sb Composite Thin Films by Magnetron Sputtering

Abstract:

Zn-Sb based composite thin films have been prepared by radio frequency magnetron sputtering using a Zn₄Sb₃ compound target followed by thermal annealing. Sample structure and surface morphology were analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The electrical properties of the films were studied by Hall measurements. The X-ray diffraction patterns reveal that the intensity of diffraction peak of ZnSb phase is enhanced as temperature increasing. Results of AFM shows the rms roughness is getting big with increasing temperature due to the growing crystal grains. Hall measurements indicate that the Zn-Sb composite thin films annealed at different temperatures are p-type conducting with carrier concentrations being on the order of 10¹⁹ cm^-³.

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Advanced Materials Research (Volume 1096)

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76-79

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https://doi.org/10.4028/www.scientific.net/AMR.1096.76

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April 2015

Authors:

Yu Huan Sun, Juan Qin*, Guo Hua Wang, Wei Min Shi

Keywords:

Annealing, Magnetron Sputtering, Thin Film, ZnSb

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