Evaluation of SEE on a 32-bit Microprocessor by Laser Test and Heavy Ion Test

Abstract:

In this paper the SEE (single event effects) of different parts of device were explored on a 32-bit microprocessor with a five-stage instruction pipeline by laser test and heavy ion test. The cross section curves for different function units were obtained and the comparison of the dates obtained from laser test and heavy ion tests was made. In addition, laser test under different scanning steps were made which indicate that when the scanning step length is in small steps which is considerably equivalent to the laser spot size, there is little change in the number of single event errors caused by each laser pulse. Wherever with the scanning step increasing, the number of single event errors caused by each laser pulse will be reduced. Experiment results suggest that there are differences between laser test and the heavy ion test but have a similar trend. The pulsed laser is an extremely powerful and low-cost technique for SEE testing and will provide invaluable information in characterizing SEE in integrate circuits.

• Periodical: Advanced Materials Research (Volume 1105)
• Pages: 391-396
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1105.391
• Online since: May 2015
• Authors: Chun Qing Yu*, Long Fan, Suge Yue, Jian Hua Ma, Hong Chao Zheng
• Keywords: Backside Laser Irradiation, Cross-Section, Heavy Ion Irradiation, Microprocessor

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