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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1105Effects of Sputtering Pressure on Cu3N Thin Films...

Effects of Sputtering Pressure on Cu₃N Thin Films by Reactive Radio Frequency Magnetron Sputtering

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Abstract:

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu₃N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (E_g) of Cu₃N thin films increases with the sputtering pressure. The surface morphology of Cu₃N thin film deposited at high sputtering pressure becomes smoother than that of Cu₃N thin film deposited at low sputtering pressure.

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Advanced Materials Research V

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Periodical:

Advanced Materials Research (Volume 1105)

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74-77

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1105.74

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Online since:

May 2015

Authors:

Xiao Lin Ji, Hai Dong Ju, Tao Yu Zou, Jin Long Luo, Kun Quan Hong, Hai Yang, Hai Wang*

Keywords:

Atomic Force Microscopy, Copper Nitride Thin Film, Crystal Structure, Optical Band Gap, Reactive Radio Frequency Magnetron Sputtering

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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