Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation

Article Preview

Abstract:

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

514-519

Citation:

Online since:

June 2015

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] J.M. Shaw, P.F. Seidler, Organic electronics: Introduction, IBM J. Res. Dev., vol. 45, (2001).

Google Scholar

[2] S. Locci, Modeling of the physical and electrical characteristics of organic thin film transistors, University of Cagliari, (2009).

Google Scholar

[3] J.N. Haddock, X. Zhang, S. Zheng, Q. Zhang, S.R. Marder, B. Kippelen, A comprehensive study of short channel effects in organic field-effect transistors, Organic Electronics, 7: 46–54, (2006).

DOI: 10.1016/j.orgel.2005.11.002

Google Scholar

[4] M. Koehler, I. Biaggio, Space-charge and trap-filling effects in organic thin film field-effect transistors, Physical Review B, 70: 045314–1, 8, (2004).

Google Scholar

[5] M.J. Sharifi, A. Bazyar, Pentacene-based organic field-effect transistors: analytical model and simulation methods versus experiment data, ACEE Int. J. on Control System and Instrumentation, Vol. 02, No. 03, (2011).

Google Scholar

[6] P. Mittal, B. Kumar, Y.S. Negi, B.K. Kaushik, R.K. Singh, Channel length variation effect on performance parameters of organic field effect transistors, Microelectronics J. 4, 985-994, (2012).

DOI: 10.1016/j.mejo.2012.07.016

Google Scholar

[7] P. Mittal, Y.S. Negi, R.K. Singh, Analysis of top and bottom contact transistor performance for different technology nodes, Int. Symposium on Electronic System Design, (2012).

DOI: 10.1109/ised.2012.60

Google Scholar

[8] H. Klauk, Organic thin film transistor. Chem. Soc. Rev., vol. 39, (2010).

Google Scholar

[9] H.S. Shin, C. Lee, S.W. Hwang, B.G. Park, Y.J. Park, H.S. Min, Channel length independent sub-threshold characteristics in submicron MOSFET's, IEEE Electron Device Lett., Vol. 19, No. 4, (1998).

DOI: 10.1109/55.663539

Google Scholar