Effect of Duty Cycle on Pulse Electrodeposited Tin Seleno Telluride Semiconductor Thin Film

Abstract:

Tin seleno telluride thin film was deposited by pulse electrodeposition onto fluorine doped tin oxide coated glass from aqueous solution containing Sn-EDTA, Na₂SeO₃ and TeO₂. The sample was deposited at a potential of-0.40 V vs Ag/AgCl with various duty cycle between 10% to 90% followed by annealing under nitrogen gas at 250°C for 30 minutes. The crystalline structure, morphology and photoresponse of the thin film was analyzed using X-ray diffraction (XRD), scanning electron microscopy and linear sweep photovoltammetry techniques. The XRD pattern shows polycrystalline cubic structure of SnSe_0.4Te_0.6 for film deposited at 50% duty cycle. The domain peak at 2θ=28.82^o shows a high intensity and a better photoresponse due to the small crystalline size. The tin seleno telluride thin film reflects the loose short rod type aggregates at 10%-50% duty cycle and dendritic structure was formed at deposition of 75% and above. The deposited tin seleno telluride is a p-type semicoductor and the band gap was found to be 1.60 eV with direct transition.

• Periodical: Advanced Materials Research (Volume 1107)
• Pages: 643-648
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1107.643
• Online since: June 2015
• Authors: Chew Ping Chia, Zulkarnain Zainal*, Yusran Sulaiman, Sook Keng Chang
• Keywords: Duty Cycle, Pulse Electrodeposition, Thin Film, Tin Seleno Telluride

References

[1] T.S. Rao, B. Ray, A. Chaudhuri, X-ray line profile analysis studies on SnSe thin films deposited at different substrate temperatures, Thin Solid Films. 165 (1988) 257-263.

DOI: 10.1016/0040-6090(88)90697-9

[2] E. Krause, H. Hartmann, J. Menninger, A. Hoffmann, C. Fricke, R. Heitz, B. Lummer, V. Kutzer, I. Broser, Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition, J. Cryst. Growth. 138 (1994).

DOI: 10.1016/0022-0248(94)90783-8

[3] J. Furst, H. Pascher, T. Schwarzl, M. Boberl, W. Heiss, G. Springholz, G. Bauer, Midinfrared IV–VI vertical-cavity surface-emitting lasers with zero-, two-, and three-dimensional systems in the active regions, Appl. Phys. Lett. 81 (2002) 208-210.

DOI: 10.1063/1.1491285

[4] M. Sharon, K. Basavaswaran, Photoelectrochemical studies on p-SnSe electrodes, Solar Cells. 20 (1987) 323-332.

DOI: 10.1016/0379-6787(87)90007-x

[5] X. Fan, J. Yang, W. Zhu, H. Yun, R. Chen, S. Bao, X. Duan, Microstructure and thermoelectric properties of n-type Bi2Te2. 85Se0. 15 prepared by mechanical alloying and plasma activated sintering, J. Alloys Compd. 420 (2006) 256-259.

DOI: 10.1016/j.jallcom.2005.10.025

[6] V. Saaminathan, K.R. Murali, Importance of pulse reversal effect of CdSe thin films for optoelectronic devices, J. Cryst. Growth. 279 (2005) 229-240.

DOI: 10.1016/j.jcrysgro.2005.02.020

[7] F. Liu, C. Huang, Y. Lai, Z. Zhang, J. Li, Y. Liu, Preparation of Cu(In, Ga)Se2 thin films by pulse electrodeposition, J. Alloys Compd. 509 (2011) L129-L133.

DOI: 10.1016/j.jallcom.2010.12.031

[8] M. Kalantary, D. Gabe, Physical properties of pulsed current copper electrodeposits, J. Mater. Sci. 30 (1995) 4515-4522.

DOI: 10.1007/bf01153056

[9] K.R. Murali, V. Swaminathan, D.C. Trivedi, Characteristics of nanocrystalline CdSe films, Sol. Energy Mater. Sol. Cells. 81 (2004) 113-118.

DOI: 10.1016/j.solmat.2003.08.019

[10] W. -J. Li, K. -L. Hsueh, Study of electrodeposition of bismuth telluride by voltammetric methods and in-situ electrochemical quartz crystal microbalance method, Thin Solid Films, 515 (2007) 7847-7854.

DOI: 10.1016/j.tsf.2007.04.037

[11] J. Lensch-Falk, D. Banga, P. Hopkins, D. Robinson, V. Stavila, P. Sharma, D. Medlin, Electrodeposition and characterization of nano-crystalline antimony telluride thin films, Thin Solid Films, 520 (2012) 6109-6117.

DOI: 10.1016/j.tsf.2012.05.078

[12] Z. Zainal, A.J. Ali, A. Kassim, M.Z. Hussein, Structure and Photoactivity of Electrodeposited Tin Selenide Films on Tin Substrate, Malaysian Journal of Analytical Sciences, 7 (2001) 197-202.

[13] V. Richoux, S. Diliberto, C. Boulanger, J.M. Lecuire, Pulsed electrodeposition of bismuth telluride films: Influence of pulse parameters over nucleation and morphology, Electrochim. Acta. 52 (2007) 3053-3060.

DOI: 10.1016/j.electacta.2006.09.042

[14] F. Liu, C. Huang, Y. Lai, Z. Zhang, J. Li, Y. Liu, Preparation of Cu (In, Ga) Se2 thin films by pulse electrodeposition, J. Alloys Compd. 509 (2011) L129-L133.

DOI: 10.1016/j.jallcom.2010.12.031