Properties of Boron Doped Amorphous Carbon Films at -30 V and -50 V for Carbon Based Solar Cell Applications

A. Ishak; Mohd Firdaus Malek; Mohamad Hafiz Mamat; Mohammad Rusop

doi:10.4028/www.scientific.net/AMR.1109.143

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1109Properties of Boron Doped Amorphous Carbon Films...

Properties of Boron Doped Amorphous Carbon Films at -30 V and -50 V for Carbon Based Solar Cell Applications

Abstract:

The a-C:B film were prepared by mixing vapor of hydrocarbon palm oil, boron dopant, carrier gas, and argon in the chamber deposited at -30 V and -50 V of negative bias voltage. The effect of these negative bias voltage on the thickness, electrical and electronic properties of a-C:B film were investigated. It was observed, the optical band gap slightly changed (2.0 eV to 2.04 eV). The fabricated solar cell with the configuration of Au/p-C:B/n-Si/Au achieved conversion efficiency (η) of 0.192% at applied bias voltage of -50 V. This result showed by the applied of negative bias voltage can controlled the interstitial doping of boron in the amorphous carbon films network.

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Periodical:

Advanced Materials Research (Volume 1109)

Pages:

143-147

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.143

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Online since:

June 2015

Authors:

A. Ishak*, Mohd Firdaus Malek, Mohamad Hafiz Mamat, Mohammad Rusop

Keywords:

Custom-Made, Hydrogen Free, Preparation Method, Solid Boron

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