Infuence of Nitrogen Gas Flow Rate on Nitrogenated Amorphous Carbon Film for Solar Cell Applications

A. Ishak; Mohd Firdaus Malek; Mohamad Hafiz Mamat; Mohamad Rusop

doi:10.4028/www.scientific.net/AMR.1109.138

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1109Infuence of Nitrogen Gas Flow Rate on Nitrogenated...

Infuence of Nitrogen Gas Flow Rate on Nitrogenated Amorphous Carbon Film for Solar Cell Applications

Abstract:

In this paper, the effect of nitrogen gas flow rate on electrical and electronic properties of nitrogen doped amorphous carbon film (a-C:N) by the use of constant +50 V is presented. The flow-rate of nitrogen gas into the furnace was influenced the resistivity as well as conductivity a-C:N film. The resistivity and conductivity of a-C:N films deposited at high nitrogen flow-rate (200 mL/min) produced low resistivity and high conductivity under deposition condition used. The highest resistivity (4.97x10⁷Ω.cm) and lowest resistivity (2.81x10¹ Ω.cm) is found at 0 mL/min (undoped) and 200 mL/min. The fabricated solar cell device with the configuration of Au/n-C:N/p-Si/Au for undoped (0 mL/min) and nitrogen doped (200 mL/min) achieved efficiency (𝜂) 0.00111% and 0.00120 %, respectively.

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Advanced Materials Research (Volume 1109)

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138-142

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.138

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Online since:

June 2015

Authors:

A. Ishak, Mohd Firdaus Malek, Mohamad Hafiz Mamat, Mohamad Rusop

Keywords:

Amorphous Carbon, Negative Bias, Nitrogen Flow Rate, Palm-Oil, Pyrolysis-CVD

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References

[1] T. Kamada, Y. Sohma, M. Watanabe, and S. Mukaigawa, Fabrication of diamond-like carbon films using pseudo-spark discharge plasma-enhanced chemical vapor deposition method, Japanese Journal of Applied Physics 53 (2004) 068006.

DOI: 10.7567/jjap.53.068006

Google Scholar

[2] Shu Liu, Guangfu Wang, Zhenghao Wang, Study of the conductivity of nitrogen doped tetrahedral amorphous carbon films, Journal of Non-Crystalline Solids 353 (2007) 2796-2798.

DOI: 10.1016/j.jnoncrysol.2007.05.021

Google Scholar

[3] Mohd. Husairi, Jalal Rouhi, Kevin Alvin, Zainurul Atikah, Muhamad Rusop, Saifollah Abdullah, Development high-sensitivity ethanol liquid sensors based onZnO/porous Si nanostructure surfacesusing an electrochemical technique, Semiconductor science and tech. 29 (2014) 075015.

DOI: 10.1088/0268-1242/29/7/075015

Google Scholar

[4] Jalal Rouhi, S, Mahmud, N. Naderi, M. R. Mahmood, Physical properties of fish gelatin-based bio-nanocomposite films incorporated with ZnO nanorods, Nanoscale Research Lett. 8 (2013) 364.

DOI: 10.1186/1556-276x-8-364

Google Scholar

[5] A. Ishak, K. Dayana, and M. Rusop, Surface morphology and compositional analysis of undoped amorphous carbon thin films via bias assisted pyrolysis-CVD Advanced Material Research 667 (2013) 468-476.

DOI: 10.4028/www.scientific.net/amr.667.468

Google Scholar

[6] A.Bubenzer, B. Dischler, G. Brandt, and P. Koidl, rf-plasma deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications, Journal of Application Physics 54 (1983) 4590-4595.

DOI: 10.1063/1.332613

Google Scholar

[7] H. Dai, Y. Zhang, Z. Chen, and F. Zhai, Investigating the structural and physical properties of hydrogenated amorphous carbon films fabricated by middle frequency pulsed unbalanced magnetron sputtering, Physica B: Condensed Matter, vol. 438, pp.34-40, 2014.

DOI: 10.1016/j.physb.2013.12.045

Google Scholar

[8] M. Rusop, S.M. Mominuzzaman, T. Soga, T. Jimbu, M. Umeno, Nitrogen doping in champoric carbon films andits application to photovoltaic, Surface Review and Letters 12 (2005) 35-39.

DOI: 10.1142/s0218625x0500672x

Google Scholar

[9] J. Robertson , C.A. Davis, Nitrogen doping of tetrahedral amorphous carbon, Diamond and Related Materials 4 (1995) 441-444.

DOI: 10.1016/0925-9635(94)05265-4

Google Scholar

[10] L. Y. Huang, L. Meng, Effects of films thickness on microstructure and electrical properties of the pyrite films, Mater. Sci. Eng. B 137 (2007) 310.

Google Scholar

[11] F. Alibart, S. Peponas, S. Charvet, M. Benlahsen, The effect of terminating bonds on electrical properties of sputtered carbon nitride thin films, Thin Solid Films 51 (2011) 3430-3436.

DOI: 10.1016/j.tsf.2011.01.256

Google Scholar

[12] Y. Hayashi, S. Ishikawa, T. soga, M. Umeno, and T. Jimbo, Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by rf plasma enhanced CVD using trimethylboron, Diamond and Related Materials 12 (2003) 687-690.

DOI: 10.1016/s0925-9635(03)00031-1

Google Scholar