Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

Abstract:

Performance of lead titanate, (PbTiO₃) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO₃ offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO₃ thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO₃ thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

• Periodical: Advanced Materials Research (Volume 1109)
• Pages: 461-465
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1109.461
• Online since: June 2015
• Authors: Nurbaya Zainal*, Mohd Hafiz Wahid, Mohammad Rusop
• Keywords: Annealing Temperature, Dielectric Property, Lead Titanate, Leakage Current Density, Spin Coating Method

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