Laser-Induced Modification of Properties of CdZnTe Crystals

Abstract:

The photoconductivity (PC) spectra of CdZnTe (CZT) semiconductor solid solutions obtained from different manufacturers were investigated before and after irradiation with nanosecond laser pulses. Depending of energy density, irradiation of CZT crystals resulted in an increase in the photosensitivity, high-energy shift of the PC spectrum maximum and transformation of its profile. Laser processing with the certain energy densities improved homogeneity in the crystal surface area and provided equalization of structural characteristics in the surface region and bulk of the samples. Irradiation of CZT crystals pre-coated with an In electrode film caused rectification in the I-V characteristics because of the formation of a barrier structure. The application of the obtained In/CZT/Au diodes with low leakage current as X/γ-ray detectors is considered.

• Periodical: Advanced Materials Research (Volume 1117)
• Pages: 15-18
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1117.15
• Online since: July 2015
• Authors: Volodymyr A. Gnatyuk*, Oleksandr I. Vlasenko, Sergiy N. Levytskyi, Toru Aoki
• Keywords: CdZnTe Crystals, Diode Structures, I-V Characteristics, Laser Irradiation, Photoconductivity Spectra, X/γ-Ray Detector

References

[1] T. Takahashi, S. Watanabe, Recent progress in CdTe and CdZnTe detectors, IEEE Trans. Nucl. Sci. 48(4, Part 1) (2001) 950-959.

DOI: 10.1109/23.958705

[2] Cs. Szeles, CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications. Phys. Stat. Sol. B 241(3) (2004) 783-790.

DOI: 10.1002/pssb.200304296

[3] S. Del Sordo, L. Abbene, E. Caroli, A.M. Mancini, A. Zappettini, P. Ubertini, "Progress in the development of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications, Sensors 9(5) (2009) 3491-3526.

DOI: 10.3390/s90503491

[4] Q. Zheng, F. Dierre, J. Crocco, V. Carcelen, H. Bensalah, J.L. Plaza, E. Dieguez, Influence of surface preparation on CdZnTe nuclear radiation detectors, Appl. Surf. Sci., 257(20) (2011) 8742-8746.

DOI: 10.1016/j.apsusc.2011.05.098

[5] O.L. Maslyanchuk, L.A. Kosyachenko, V.A. Gnatyuk, T. Aoki, I.M. Rarenko, V.M. Sklyarchuk, Capabilities of CdZnTe-based Schottky diodes for detection of optical and X/g-ray radiation, Phys. Stat. Sol. C, 6(5) (2009) 1282-1286.

DOI: 10.1002/pssc.200881226

[6] L.A. Kosyachenko, T. Aoki, C.P. Lambropoulos, V.A. Gnatyuk, S.V. Melnychuk, V.M. Sklyarchuk, E.V. Grushko, O.L. Maslyanchuk, O.F. Sklyarchuk, Optimal width of barrier region in X/γ-ray Schottky diode detectors based on CdTe and CdZnTe, J. Appl. Phys. 113(5) (2013).

DOI: 10.1063/1.4790358

[7] V.A. Gnatyuk, S.N. Levytskyi, O.I. Vlasenko, T. Aoki, Laser-induced doping of CdTe crystal in different environments, Adv. Mater. Res. 222 (2011) 32-35.

DOI: 10.4028/www.scientific.net/amr.222.32

[8] V.A. Gnatyuk, O.I. Vlasenko, T. Aoki, A. Koike, Fabrication of high resolution X/γ-ray detectors using laser-induced doping of CdTe in liquid, Nuclear Science Symposium and Medical Imaging Conference Record (2013) 1-5.

DOI: 10.1109/nssmic.2013.6829821

[9] A. Medvid, A. Mychko, E. Dauksta, V. Ivanov, L. Alekseeva, E. Dieguzs, J. Crosso, H. Bensalah, Improvement of CdZnTe radiation detectors parameters by laser radiation, Nuclear Science Symposium and Medical Imaging Conference Record (2012).

DOI: 10.1109/nssmic.2011.6154756

[10] V.A. Gnatyuk, O.I. Vlasenko, P.O. Mozol', O.S. Gorodnychenko, Role of laser-induced stress and shock waves in modification of the photoconductivity of CdxHg1-xTe films, Semicond. Sci. Technol. 13(11) (1998) 1298-1303.

DOI: 10.1088/0268-1242/13/11/012

[11] V.A. Gnatyuk., T. Aoki, Y. Hatanaka, Laser-stimulated control of interfaces at grain boundaries in polycrystalline CdxHg1-xTe films, Appl. Surf. Sci. 216(1-4) (2003) 88-93.

DOI: 10.1016/s0169-4332(03)00483-5