Experimental Investigations on Cylindrical Grinding Temperature of Silicon Carbide

Abstract:

The grinding process requires a high energy expenditure per unit volume of material removed. The high temperature generated in abrasive processes is the main factor responsible for thermal damage to a ground surface. An investigation was undertaken to explore the temperature characteristics in high speed grinding (HSG) of silicon carbide (SiC) with a vitrified diamond wheel. A grindable thermocouople technique including a NI-DAQ device will be used to measure the grinding temperature. This paper will discuss the temperature characteristics in high speed grinding of SiC in detail and give an experiment-based temperature distribution model for SiC. A molecular dynamics simulation will be used to illustrate the effect of a high loading rate on SiC material’s mechanical property, which will further elaborate its unique HSG temperature characteristics. The experimental investigation will provide more practical application support in utilizing HSG technology in a high quality ceramic grinding.

• Periodical: Advanced Materials Research (Volumes 1120-1121)
• Pages: 1251-1256
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1120-1121.1251
• Online since: July 2015
• Authors: Chong Jun Wu*, Bei Zhi Li, Steven Y. Liang, Jian Guo Yang
• Keywords: Grinding Temperature, High Speed Grinding (HSG), Silicon Carbide (SiC)

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